Supply original IRF7104TRPBF, Transistors - FETs, MOSFETs - Arrays, by Infineon Technologies

MOSFET 2P-CH 20V 2.3A 8-SOIC

RoHS
Datasheet
Supply original IRF7104TRPBF, Transistors - FETs, MOSFETs - Arrays, by Infineon Technologies | TrustCompo

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Part Number

IRF7104TRPBF

Internal code

TCE000044553

Package

8-SOIC

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET 2P-CH 20V 2.3A 8-SOIC

key Attributes

-

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Product overview

Overview

MOSFET 2P-CH 20V 2.3A 8-SOIC

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn)

Product Parameter

FET Technology

METAL-OXIDE SEMICONDUCTOR

Product Parameter

Rise Time

16ns

Product Parameter

Dual Supply Voltage

-20V

Product Parameter

Drain To Source Voltage (Vdss)

20V

Product Parameter

Number Of Elements

2

Terminal Finish
Matte Tin (Sn)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Rise Time
16ns
Dual Supply Voltage
-20V
Drain To Source Voltage (Vdss)
20V
Number Of Elements
2
Turn-Off Delay Time
42 ns
Turn On Delay Time
12 ns
FET Feature
Logic Level Gate
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Published
1997
Packaging
Tape & Reel (TR)
Width
3.9878mm
Termination
SMD/SMT
Terminal Form
GULL WING
Package / Case
8-SOIC (0.154, 3.90mm Width)
Max Power Dissipation
2W
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Vgs(Th) (Max) @ Id
3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Length
4.9784mm
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
8
Number Of Terminations
8
Voltage - Rated DC
-20V
Drain To Source Breakdown Voltage
-20V
Element Configuration
Dual
Gate To Source Voltage (Vgs)
12V
Height
1.4986mm
Power Dissipation
2W
Resistance
250mOhm
Row Spacing
6.3 mm
Additional Feature
ULTRA LOW RESISTANCE
Fall Time (Typ)
30 ns
Recovery Time
100 ns
FET Type
2 P-Channel (Dual)
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Threshold Voltage
-3V
Nominal Vgs
-3 V
Rds On (Max) @ Id, Vgs
250m Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds
290pF @ 15V
Current Rating
-2.3A
Manufacturer'S Part No.
IRF7104TRPBF
Current - Continuous Drain (Id) @ 25°C
2.3A
Pulsed Drain Current-Max (IDM)
10A
Continuous Drain Current (ID)
-2.3A
Base Part Number
IRF7104PBF
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is IRF7104TRPBF?

IRF7104TRPBF is a Transistors - FETs, MOSFETs - Arrays component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF7104TRPBF?

IRF7104TRPBF is listed with package reference 8-SOIC. The current product description is MOSFET 2P-CH 20V 2.3A 8-SOIC, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF7104TRPBF available in stock?

This page currently shows 56338 units in stock and 22301 units available for IRF7104TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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