Supply original PHN210T,118, Transistors - FETs, MOSFETs - Arrays, by Nexperia

MOSFET 2N-CH 30V 8SOIC

RoHS
Datasheet
Supply original PHN210T,118, Transistors - FETs, MOSFETs - Arrays, by Nexperia | TrustCompo

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Part Number

PHN210T,118

Internal code

TCE000040870

Package

8SOIC

Manufacturer

Nexperia

Key specifications

Serise

TrenchMOS™

Min Quantity

1

Description

MOSFET 2N-CH 30V 8SOIC

key Attributes

-

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4 certifications

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AS9120B

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ISO 14001

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CoC Available on Request

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Product overview

Overview

MOSFET 2N-CH 30V 8SOIC

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Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-609 Code

e4

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-609 Code
e4
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Published
2010
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Package / Case
8-SOIC (0.154, 3.90mm Width)
Max Power Dissipation
2W
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Nominal Vgs
2 V
Operating Temperature
-65°C~150°C TJ
Manufacturer
Nexperia
Surface Mount
YES
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Width
4mm
Length
5mm
Height
1.45mm
Number Of Pins
8
Number Of Terminations
8
Pin Count
8
Gate To Source Voltage (Vgs)
20V
Element Configuration
Dual
Drain To Source Breakdown Voltage
30V
Additional Feature
LOGIC LEVEL COMPATIBLE
Power Dissipation
2W
Threshold Voltage
2V
Fall Time (Typ)
15 ns
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
FET Type
2 N-Channel (Dual)
Vgs(Th) (Max) @ Id
2.8V @ 1mA
Drain-Source On Resistance-Max
0.1Ohm
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 20V
Rds On (Max) @ Id, Vgs
100m Ω @ 2.2A, 10V
Series
TrenchMOS™
Manufacturer'S Part No.
PHN210T,118
Avalanche Energy Rating (Eas)
13 mJ
Pulsed Drain Current-Max (IDM)
14A
Drain Current-Max (Abs) (ID)
3.4A
Continuous Drain Current (ID)
2.4A
JEDEC-95 Code
MS-012AA
Gate Charge (Qg) (Max) @ Vgs
6nC @ 10V
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Elements
2
Dual Supply Voltage
30V
Turn-Off Delay Time
21 ns
Rise Time
8ns
Turn On Delay Time
6 ns
FET Feature
Logic Level Gate
Max Dual Supply Voltage
30V

Common questions

Product FAQ

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What is PHN210T,118?

PHN210T,118 is a Transistors - FETs, MOSFETs - Arrays component from Nexperia. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for PHN210T,118?

PHN210T,118 is listed with package reference 8SOIC. The current product description is MOSFET 2N-CH 30V 8SOIC, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is PHN210T,118 available in stock?

This page currently shows 60930 units in stock and 35902 units available for PHN210T,118. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for PHN210T,118?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for PHN210T,118 by Nexperia. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for PHN210T,118?

Yes. This page links to the datasheet for PHN210T,118 by Nexperia, so engineers and buyers can review package, ratings, and application details before purchase.

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