ON Semiconductor Circuit Protection TVS - Diodes

NUP1105LT1G TVS - Diodes by ON Semiconductor

NUP1105LT1G is a TVS - Diodes model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Circuit Protection / TVS - Diodes product path. Known package information currently points to SOT23 under the ON Semiconductor brand listing. TVS DIODE 24V 44V SOT23-3. TrustCompo combines the available model, brand, hierarchy, and specification details around NUP1105LT1G so buyers can move faster from review to quotation.

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Datasheet

NUP1105LT1G TVS - Diodes by ON Semiconductor | TrustCompo

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Part Number

NUP1105LT1G

Internal code

TCE000027518

Package

SOT23

Manufacturer

ON Semiconductor

Key specifications

Series

Automotive, AEC-Q101

Min Quantity

Availability

In Stock

94,715

Available

10,458

Requested quantity

Price Range

Due to different local policies, please contact us for the latest quotation.

Quality	Unit Price
1	$0.31
10	$0.21
30	$0.16
100	$0.13
500	$0.11
1,000	$0.10

Technical document

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Globally recognized certifications

4 certifications

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ISO 9001

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AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

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ESD Control

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Product overview

Overview

The NUP1105LT1G is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-voltage applications and is particularly suitable for power management and switching applications. Here’s a detailed description of its features and specifications:

Key Features:

Dual N-Channel Configuration: The NUP1105LT1G contains two N-channel MOSFETs in a single package, allowing for compact designs and efficient use of board space.
Low On-Resistance (RDS(on)): The device boasts a low on-resistance, which minimizes power loss during operation. This characteristic is crucial for applications requiring high efficiency.
High-Speed Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications such as DC-DC converters, motor drivers, and other power management circuits.
Low Gate Threshold Voltage (VGS(th)): The gate threshold voltage is low, enabling the device to be driven by low-voltage control signals, which is beneficial in battery-operated devices.
Thermal Performance: The package is designed to provide good thermal performance, allowing for efficient heat dissipation during operation.
Compact Package: The NUP1105LT1G is typically available in a small surface-mount package (such as the SOT-23), which is advantageous for space-constrained applications.

Electrical Specifications:

Maximum Drain-Source Voltage (VDS): The device can handle a maximum drain-source voltage, making it suitable for various voltage levels in power applications.
Continuous Drain Current (ID): The maximum continuous drain current rating indicates the amount of current the MOSFET can handle without overheating.
Gate-Source Voltage (VGS): The maximum gate-source voltage rating defines the limits for the gate drive voltage.

Applications:

The NUP1105LT1G is commonly used in:

Power management circuits
Load switching applications
Motor control
Battery management systems
DC-DC converters
LED drivers

Conclusion:

The NUP1105LT1G from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is well-suited for a variety of low-voltage power applications. Its combination of low on-resistance, high-speed switching capabilities, and compact packaging makes it an excellent choice for modern electronic designs requiring efficient power management solutions.

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