PSMNR90-80CSF ASFETs for Battery Systems and eFuse by Nexperia

Specifies the total count of individual transistor die or chips integrated within a single component package. This is critical for multi-transistor arrays, Darlington pairs, or modules. Verify against the datasheet to ensure the package meets your circuit design requirements for channel count and configuration.

Maximum drain-source voltage rating for MOSFETs. This is the highest voltage that can be applied between drain and source without causing breakdown. Check the datasheet for absolute maximum ratings and ensure your circuit operates well below this limit for reliability.

This is the maximum drain-source on-resistance when the junction temperature reaches 175°C. It indicates conduction losses at high temperature. Compare this value with the datasheet to ensure thermal performance meets your application requirements.

Maximum junction temperature is the highest allowable operating temperature of the semiconductor die. Exceeding it can cause thermal damage or reduced reliability. Compare this limit with your application's worst-case thermal conditions and verify against the datasheet's thermal specifications.

Lifecycle status of the product, such as active, obsolete, or end-of-life. This affects long-term availability and design reliability. For production, choose active products to ensure supply continuity. Check the datasheet or manufacturer for lifecycle details.

Identifies the company that designed and produced the component. Buyers often filter by manufacturer to ensure brand reliability, quality standards, and supply chain consistency. Verify the manufacturer against the datasheet and official packaging to avoid counterfeit parts.

Typical charge stored in the diode junction during reverse recovery. Compare this value to estimate switching losses in rectifier and freewheeling circuits. Verify against the datasheet for your operating conditions.

Typical gate-source threshold voltage at which the MOSFET begins to conduct. Check this value to ensure proper gate drive voltage levels in your switching application. Compare with min and max values from datasheet.

Maximum thermal resistance from the semiconductor junction to the mounting base. This value determines how effectively heat is transferred to a heatsink or PCB. Lower values indicate better thermal performance. Use this parameter to calculate junction temperature and ensure reliable operation under load.

Indicates the component meets AEC-Q or other automotive reliability standards. Verify the specific qualification level in the datasheet. Essential for designs targeting automotive applications where extended temperature ranges and high vibration resistance are critical.

Typical drain-source on-resistance when the gate-source voltage is 10 V. Lower values reduce conduction losses and heat. Compare this parameter across MOSFETs for switching and power applications, and verify it against the datasheet's test conditions.

Typical gate-drain charge (Qgd) in nanocoulombs, indicating the charge required to switch the MOSFET's drain during turn-off. Lower values enable faster switching and reduced losses. Verify against datasheet for your operating conditions.

This is the maximum drain-source on-resistance when the gate-source voltage is 10 V. Lower values mean less conduction loss. Check this against your thermal and efficiency requirements, and verify it in the datasheet for your operating conditions.

Maximum total power the component can dissipate without damage. Compare across parts to ensure adequate thermal margin for your application. Verify against datasheet conditions, as derating may apply at high temperatures.

Identifies the physical package type or designator, such as SOIC, QFN, or DIP. This determines PCB footprint, thermal performance, and assembly compatibility. Verify the package matches your board layout and manufacturing capabilities. Check the datasheet for exact dimensions.

Total gate charge required to switch the MOSFET at a gate-source voltage of 10 V. Lower values reduce switching losses and improve efficiency. Compare this parameter when designing gate drivers or high-frequency circuits, and verify against the datasheet for your operating conditions.

Maximum total power the component can dissipate without damage. Compare across parts to ensure adequate thermal margin for your application. Verify against datasheet conditions, as derating may apply at high temperatures.

Indicates when the component was first introduced to the market. Useful for assessing product maturity, lifecycle stage, and availability. Check the datasheet for the exact release date and compare with similar parts to ensure long-term supply.

Typical output capacitance (Coss) of a power semiconductor, measured between drain and source. It affects switching losses and high-frequency behavior. Compare values when designing snubbers or resonant converters. Always verify against the datasheet for your operating conditions.

Total gate charge required to switch the MOSFET at a gate-source voltage of 10 V. Lower values reduce switching losses and improve efficiency. Compare this parameter when designing gate drivers or high-frequency circuits, and verify against the datasheet for your operating conditions.

Typical charge stored in the diode junction during reverse recovery. Compare this value to estimate switching losses in rectifier and freewheeling circuits. Verify against the datasheet for your operating conditions.

Typical input capacitance of a MOSFET, measured in picofarads. It affects gate drive requirements and switching speed. Compare this value with the datasheet to ensure your driver can handle the charge and to optimize switching performance.

Maximum avalanche energy for a single pulse in a power device. This indicates the ability to withstand energy during avalanche breakdown without failure. It is important for applications with inductive loads. Ensure the device can handle the energy in your circuit.

Maximum continuous drain current for a MOSFET or transistor. This is the highest current the device can handle continuously without exceeding thermal limits. Verify against the datasheet for your operating conditions, including heatsinking and ambient temperature.

Maximum continuous drain current that the MOSFET can handle at a case temperature of 100 °C. This value is lower than at 25 °C due to thermal limits. Compare it with your operating current and verify against the datasheet for safe design.

Maximum pulsed drain current for MOSFETs. This value indicates the highest current the device can handle during a short pulse. Compare with continuous drain current and verify against the datasheet for pulse width and duty cycle limitations.

Maximum pulsed drain current for MOSFETs. This value indicates the highest current the device can handle during a short pulse. Compare with continuous drain current and verify against the datasheet for pulse width and duty cycle limitations.

Maximum continuous drain current that the MOSFET can handle at a case temperature of 100 °C. This value is lower than at 25 °C due to thermal limits. Compare it with your operating current and verify against the datasheet for safe design.

Maximum continuous drain current for a MOSFET or transistor. This is the highest current the device can handle continuously without exceeding thermal limits. Verify against the datasheet for your operating conditions, including heatsinking and ambient temperature.

Specifies the electrical channel configuration, such as unidirectional or bidirectional, for signal or power routing. This attribute is critical for selecting components like multiplexers, isolators, or level shifters. Verify the channel type against your application requirements and the datasheet to ensure correct signal flow and compatibility.